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Fulvio Mazzamuto
Fulvio Mazzamuto
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Title
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Cited by
Year
Enhanced thermoelectric properties in graphene nanoribbons by resonant tunneling of electrons
F Mazzamuto, V Hung Nguyen, Y Apertet, C Caër, C Chassat, ...
Physical Review B—Condensed Matter and Materials Physics 83 (23), 235426, 2011
2092011
Resonant tunnelling diodes based on graphene/h-BN heterostructure
VH Nguyen, F Mazzamuto, A Bournel, P Dollfus
Journal of Physics D: Applied Physics 45 (32), 325104, 2012
892012
Doping of semiconductor devices by Laser Thermal Annealing
K Huet, F Mazzamuto, T Tabata, I Toque-Tresonne, Y Mori
Materials Science in Semiconductor Processing 62, 92-102, 2017
552017
Graphene nanomesh-based devices exhibiting a strong negative differential conductance effect
VH Nguyen, F Mazzamuto, J Saint-Martin, A Bournel, P Dollfus
Nanotechnology 23 (6), 065201, 2012
512012
Defect evolution and dopant activation in laser annealed Si and Ge
F Cristiano, M Shayesteh, R Duffy, K Huet, F Mazzamuto, Y Qiu, M Quillec, ...
Materials Science in Semiconductor Processing 42, 188-195, 2016
502016
Extended defects formation in nanosecond laser-annealed ion implanted silicon
Y Qiu, F Cristiano, K Huet, F Mazzamuto, G Fisicaro, A La Magna, ...
Nano letters 14 (4), 1769-1775, 2014
492014
Thermoelectric performance of disordered and nanostructured graphene ribbons using Green’s function method
F Mazzamuto, J Saint-Martin, VH Nguyen, C Chassat, P Dollfus
Journal of Computational Electronics 11, 67-77, 2012
462012
Edge shape effect on vibrational modes in graphene nanoribbons: A numerical study
F Mazzamuto, J Saint-Martin, A Valentin, C Chassat, P Dollfus
Journal of Applied Physics 109 (6), 2011
432011
Giant effect of negative differential conductance in graphene nanoribbon pn hetero-junctions
V Hung Nguyen, F Mazzamuto, J Saint-Martin, A Bournel, P Dollfus
Applied Physics Letters 99 (4), 2011
382011
Bandgap nanoengineering of graphene tunnel diodes and tunnel transistors to control the negative differential resistance
V Hung Nguyen, J Saint-Martin, D Querlioz, F Mazzamuto, A Bournel, ...
Journal of computational electronics 12, 85-93, 2013
372013
Pulsed laser annealing for advanced technology nodes: Modeling and calibration
K Huet, J Aubin, PE Raynal, B Curvers, A Verstraete, B Lespinasse, ...
Applied Surface Science 505, 144470, 2020
352020
Segregation and activation of Ga in high Ge content SiGe by UV melt laser anneal
T Tabata, J Aubin, K Huet, F Mazzamuto
Journal of Applied Physics 125 (21), 2019
222019
3D sequential low temperature top tier devices using dopant activation with excimer laser anneal and strained silicon as performance boosters
A Vandooren, Z Wu, N Parihar, J Franco, B Parvais, P Matagne, ...
2020 IEEE Symposium on VLSI Technology, 1-2, 2020
202020
Nanosecond laser annealing for phosphorous activation in ultra-thin implanted silicon-on-insulator substrates
PA Alba, S Kerdiles, B Mathieu, R Kachtouli, F Mazzamuto, ...
2016 21st International Conference on Ion Implantation Technology (IIT), 1-4, 2016
192016
Laser thermal annealing: A low thermal budget solution for advanced structures and new materials
K Huet, I Toqué-Tresonne, F Mazzamuto, T Emeraud, H Besaucèle
2014 International Workshop on Junction Technology (IWJT), 1-6, 2014
192014
Solid phase recrystallization induced by multi-pulse nanosecond laser annealing
PA Alba, J Aubin, S Perrot, F Mazzamuto, A Grenier, S Kerdilès
Applied Surface Science Advances 3, 100053, 2021
182021
Ns laser annealing for junction activation preserving inter-tier interconnections stability within a 3D sequential integration
C Fenouillet-Beranger, P Acosta-Alba, B Mathieu, S Kerdilès, MP Samson, ...
2016 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference …, 2016
162016
Low thermal budget ohmic contact formation by laser anneal
F Mazzamuto, S Halty, H Tanimura, Y Mori
Materials Science Forum 858, 565-568, 2016
162016
Silicon Carbide recrystallization mechanism by non-equilibrium melting laser anneal
F Mazzamuto, S Halty, Y Mori
Materials Science Forum 858, 540-543, 2016
122016
Dopant activation and crystal recovery in arsenic-implanted ultra-thin silicon-on-insulator structures using 308nm nanosecond laser annealing
S Kerdilès, PA Alba, B Mathieu, M Veillerot, R Kachtouli, P Besson, ...
2016 16th international workshop on junction technology (IWJT), 72-75, 2016
122016
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