| Characteristics and mechanism of conduction/set process in TiN∕ ZnO∕ Pt resistance switching random-access memories N Xu, L Liu, X Sun, X Liu, D Han, Y Wang, R Han, J Kang, B Yu Applied Physics Letters 92 (23), 2008 | 440 | 2008 |
| Reconfigurable Skyrmion Logic Gates S Luo, M Song, X Li, Y Zhang, J Hong, X Yang, X Zou, N Xu, L You ACS Nano Letters, 2018 | 221 | 2018 |
| Oxide-based RRAM switching mechanism: A new ion-transport-recombination model B Gao, S Yu, N Xu, LF Liu, B Sun, XY Liu, RQ Han, JF Kang, B Yu, ... 2008 IEEE International Electron Devices Meeting, 1-4, 2008 | 170 | 2008 |
| Bipolar switching behavior in TiN/ZnO/Pt resistive nonvolatile memory with fast switching and long retention N Xu, LF Liu, X Sun, C Chen, Y Wang, DD Han, XY Liu, RQ Han, JF Kang, ... Semiconductor science and technology 23 (7), 075019, 2008 | 155 | 2008 |
| Resistive Switching in Films for Nonvolatile Memory Application X Sun, B Sun, L Liu, N Xu, X Liu, R Han, J Kang, G Xiong, TP Ma IEEE electron device letters 30 (4), 334-336, 2009 | 127 | 2009 |
| A unified physical model of switching behavior in oxide-based RRAM N Xu, B Gao, LF Liu, B Sun, XY Liu, RQ Han, JF Kang, B Yu 2008 Symposium on VLSI Technology, 100-101, 2008 | 114 | 2008 |
| Highly uniform resistive switching characteristics of TiN/ZrO2/Pt memory devices B Sun, YX Liu, LF Liu, N Xu, Y Wang, XY Liu, RQ Han, JF Kang Journal of Applied Physics 105 (6), 2009 | 106 | 2009 |
| Mr-gnn: Multi-resolution and dual graph neural network for predicting structured entity interactions N Xu, P Wang, L Chen, J Tao, J Zhao arXiv preprint arXiv:1905.09558, 2019 | 71 | 2019 |
| Hybrid CMOS/BEOL-NEMS technology for ultra-low-power IC applications N Xu, J Sun, IR Chen, L Hutin, Y Chen, J Fujiki, C Qian, TJK Liu Electron Devices Meeting (IEDM), 2014 IEEE International, 28.8. 1-28.8. 4, 2014 | 56 | 2014 |
| A spin–orbit‐torque memristive device S Zhang, S Luo, N Xu, Q Zou, M Song, J Yun, Q Luo, Z Guo, R Li, W Tian, ... Advanced Electronic Materials 5 (4), 1800782, 2019 | 53 | 2019 |
| Effectiveness of stressors in aggressively scaled FinFETs N Xu, B Ho, M Choi, V Moroz, TJK Liu IEEE Transactions on Electron Devices 59 (6), 1592-1598, 2012 | 51 | 2012 |
| Fully Functional Logic‐In‐Memory Operations Based on a Reconfigurable Finite‐State Machine Using a Single Memristor N Xu, KJ Yoon, KM Kim, L Fang, CS Hwang Advanced Electronic Materials 4 (11), 1800189, 2018 | 42 | 2018 |
| Enhancement of band-to-band tunneling in mono-layer transition metal dichalcogenides two-dimensional materials by vacancy defects XW Jiang, J Gong, N Xu, SS Li, J Zhang, Y Hao, LW Wang Applied Physics Letters 104 (2), 2014 | 39 | 2014 |
| ZrO2 Ferroelectric FET for Non-volatile Memory Application H Liu, C Wang, G Han, J Li, Y Peng, Y Liu, X Wang, N Zhong, C Duan, ... IEEE Electron Device Letters, 2019 | 37 | 2019 |
| Voltage-Controlled Skyrmion Memristor for Energy-Efficient Synapse Applications S Luo, N Xu, Z Guo, Y Zhang, J Hong, L You IEEE Electron Device Letters, 2019 | 36 | 2019 |
| Gd doping improved resistive switching characteristics of TiO2-based resistive memory devices RQH Li-Feng Liu, Jin-Feng Kang, Nuo Xu, Xiao Sun, Chen Chen, Bing Sun, Yi ... Japanese Journal of Applied Physics 47 (4), 2701-2703, 2008 | 36 | 2008 |
| Investigation of Self-Heating Effect on Hot Carrier Degradation in Multiple-Fin SOI FinFETs H Jiang, X Liu, N Xu, Y He, G Du, X Zhang IEEE Electron Device Letters 36 (12), 1258-1260, 2015 | 34 | 2015 |
| Carrier-mobility enhancement via strain engineering in future thin-body MOSFETs N Xu, B Ho, F Andrieu, L Smith, BY Nguyen, O Weber, T Poiroux, ... IEEE electron device letters 33 (3), 318-320, 2012 | 34 | 2012 |
| A unified approach for trap-aware device/circuit co-design in nanoscale CMOS technology R Wang, M Luo, S Guo, R Huang, C Liu, J Zou, J Wang, J Wu, N Xu, ... 2013 IEEE International Electron Devices Meeting, 33.5. 1-33.5. 4, 2013 | 31 | 2013 |
| Incomplete Dipoles Flipping Produced Near Hysteresis-Free Negative Capacitance Transistors J Zhou, G Han, N Xu, J Li, Y Peng, Y Liu, J Zhang, Q Sun, W Zhang, ... IEEE Electron Device Letters, 2019 | 30 | 2019 |
Xiao SunX.AI, Meta, IBM Yorktown Heights, Yale PhD' 13Verified email at us.ibm.com
