| Physics of Semiconductors SW Tozer, DJ Wolford, JA Bradley, D Bour, GB Stringfellow Polish Academy of Sciences, Warsaw, 881, 1988 | 892* | 1988 |
| Theory of substitutional deep traps in covalent semiconductors HP Hjalmarson, P Vogl, DJ Wolford, JD Dow Physical Review Letters 44 (12), 810, 1980 | 705 | 1980 |
| Pressure dependence of shallow bound states in gallium arsenide DJ Wolford, JA Bradley Solid State Communications 53 (12), 1069-1076, 1985 | 293 | 1985 |
| Pressure dependence of GaAs/AlxGa1−xAs quantum‐well bound states: The determination of valence‐band offsets DJ Wolford, TF Kuech, JA Bradley, MA Gell, D Ninno, M Jaros Journal of Vacuum Science & Technology B: Microelectronics Processing and …, 1986 | 231 | 1986 |
| Properties of high‐purity AlxGa1−xAs grown by the metalorganic vapor‐phase‐epitaxy technique using methyl precursors TF Kuech, DJ Wolford, E Veuhoff, V Deline, PM Mooney, R Potemski, ... Journal of applied physics 62 (2), 632-643, 1987 | 192 | 1987 |
| Dependence of the AlxGa1−xAs band edge on alloy composition based on the absolute measurement of x TF Kuech, DJ Wolford, R Potemski, JA Bradley, KH Kelleher, D Yan, ... Applied physics letters 51 (7), 505-507, 1987 | 176 | 1987 |
| Dependence of the AlGaAs band-edge on alloy composition based on the absolute measurement of x TF Kuech, DJ Wolford, R Potemski, JA Bradley, KH Kelleher, D Yan, ... Applied Physics Letters 51, 505, 1987 | 176 | 1987 |
| Efficient visible photoluminescence in the binary a‐Si:Hx alloy system DJ Wolford, JA Reimer, BA Scott Applied Physics Letters 42 (4), 369-371, 1983 | 138 | 1983 |
| Nitrogen isoelectronic trap in Ga As 1-x P x: II. Model calculation of the electronic states N Γ and N X at low temperature WY Hsu, JD Dow, DJ Wolford, BG Streetman Phys. Rev. B 16, 1587, 1977 | 126 | 1977 |
| Efficient visible luminescence from hydrogenated amorphous silicon DJ Wolford, BA Scott, JA Reimer, JA Bradley Physica 117B/118B, Proc. of the 16th Inter. Conf. on the Physics of …, 1983 | 124* | 1983 |
| Effects of alloying and hydrostatic pressure on electronic and optical properties of GaAs-As superlattices and multiple-quantum-well structures MA Gell, D Ninno, M Jaros, DJ Wolford, TF Keuch, JA Bradley Physical Review B 35 (3), 1196, 1987 | 113 | 1987 |
| Study of encapsulants for annealing GaAs KV Vaidyanathan, MJ Helix, DJ Wolford, BG Streetman, RJ Blattner, ... Journal of The Electrochemical Society 124 (11), 1781, 1977 | 113 | 1977 |
| Pressure dependence of deep levels in GaAs S Ren, JD Dow, DJ Wolford Phys. Rev. B 25, 7661, 1982 | 107 | 1982 |
| Efficient Visible Luminescence from Hydrogenated Amorphous Silicon DJ Wolford, BA Scott, JA Reimer, JA Bradley Physica 117B&118B 920, 1983 | 91* | 1983 |
| Efficient visible luminescence from hydrogenated amorphous silicon DJ Wolford, BA Scott, JA Reimer, JA Bradley Physica 117B/118B, 920, 1983 | 91* | 1983 |
| Nitrogen traps in the semiconductor alloys GaAsP and AlGaAs DJ Wolford, BG Streetman, WY Hsu, JD Dow Journal of Luminescence 18, 863-867, 1979 | 90* | 1979 |
| Efficient Visible Luminescence From Hydrogenated Amorphous Silicon DJ Wolford, BA Scott, JA Reimer, RM Plecenik IBM Technol. Discl. Bull. 25, 1664, 1982 | 87 | 1982 |
| Efficient Visible Luminescence from Hydrogenated Amorphous Silicon DJ Wolford, BA Scott, JA Plecenik, RM: Bradley Bull. Am. Phys. Soc 27, 145, 1982 | 87 | 1982 |
| Efficient visible luminescence from hydrogenated amorphous silicon DJ Wolford, BA Scott, JA Reimer, JA Bradley Physica 117B/118B, 920, 1982 | 87 | 1982 |
| Evidence for Radiative Recombination in GaAs1-xPx: N (0.28≲ x≲ 0.45) Involving an Isolated Nitrogen Impurity State Associated with the Γ 1 Minimum DJ Wolford, BG Streetman, WY Hsu, JD Dow, RJ Nelson, N Holonyak Jr Physical Review Letters 36 (23), 1400, 1976 | 74 | 1976 |
Jeffrey A. REIMERProfessor of Chemical Engineering, University of California BerkeleyVerified email at berkeley.edu
