| Nanoscale lateral displacement arrays for the separation of exosomes and colloids down to 20 nm BH Wunsch, JT Smith, SM Gifford, C Wang, M Brink, RL Bruce, RH Austin, ... Nature nanotechnology 11 (11), 936-940, 2016 | 562 | 2016 |
| Fluorocarbon assisted atomic layer etching of SiO2 using cyclic Ar/C4F8 plasma D Metzler, RL Bruce, S Engelmann, EA Joseph, GS Oehrlein Journal of Vacuum Science & Technology A 32 (2), 2014 | 215 | 2014 |
| Relationship between nanoscale roughness and ion-damaged layer in argon plasma exposed polystyrene films RL Bruce, F Weilnboeck, T Lin, RJ Phaneuf, GS Oehrlein, BK Long, ... Journal of Applied Physics 107 (8), 2010 | 131 | 2010 |
| Density scaling with gate-all-around silicon nanowire MOSFETs for the 10 nm node and beyond S Bangsaruntip, K Balakrishnan, SL Cheng, J Chang, M Brink, I Lauer, ... 2013 IEEE international electron devices meeting, 20.2. 1-20.2. 4, 2013 | 124 | 2013 |
| Fluorocarbon assisted atomic layer etching of SiO2 and Si using cyclic Ar/C4F8 and Ar/CHF3 plasma D Metzler, C Li, S Engelmann, RL Bruce, EA Joseph, GS Oehrlein Journal of Vacuum Science & Technology A 34 (1), 2016 | 117 | 2016 |
| Fabrication of sub-20 nm nanopore arrays in membranes with embedded metal electrodes at wafer scales J Bai, D Wang, S Nam, H Peng, R Bruce, L Gignac, M Brink, E Kratschmer, ... Nanoscale 6 (15), 8900-8906, 2014 | 86 | 2014 |
| ALD-based confined PCM with a metallic liner toward unlimited endurance W Kim, M BrightSky, T Masuda, N Sosa, S Kim, R Bruce, F Carta, ... 2016 IEEE International Electron Devices Meeting (IEDM), 4.2. 1-4.2. 4, 2016 | 85 | 2016 |
| Application of the protection/deprotection strategy to the science of porous materials T Frot, W Volksen, S Purushothaman, R Bruce, G Dubois Advanced Materials 25 (23), 2828-2832, 2011 | 84 | 2011 |
| Synergistic effects of vacuum ultraviolet radiation, ion bombardment, and heating in 193nm photoresist roughening and degradation D Nest, DB Graves, S Engelmann, RL Bruce, F Weilnboeck, GS Oehrlein, ... Applied Physics Letters 92 (15), 2008 | 82 | 2008 |
| Plasma-surface interactions of model polymers for advanced photoresists using C4F8∕ Ar discharges and energetic ion beams S Engelmann, RL Bruce, T Kwon, R Phaneuf, GS Oehrlein, YC Bae, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2007 | 80 | 2007 |
| Study of ion and vacuum ultraviolet-induced effects on styrene-and ester-based polymers exposed to argon plasma RL Bruce, S Engelmann, T Lin, T Kwon, RJ Phaneuf, GS Oehrlein, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2009 | 78 | 2009 |
| Understanding the roughening and degradation of 193 nm photoresist during plasma processing: synergistic roles of vacuum ultraviolet radiation and ion bombardment D Nest, TY Chung, DB Graves, S Engelmann, RL Bruce, F Weilnboeck, ... Plasma processes and polymers 6 (10), 649-657, 2009 | 72 | 2009 |
| Near-surface modification of polystyrene by Ar+: Molecular dynamics simulations and experimental validation JJ Vegh, D Nest, DB Graves, R Bruce, S Engelmann, T Kwon, RJ Phaneuf, ... Applied Physics Letters 91 (23), 2007 | 67 | 2007 |
| Confined PCM-based analog synaptic devices offering low resistance-drift and 1000 programmable states for deep learning W Kim, RL Bruce, T Masuda, GW Fraczak, N Gong, P Adusumilli, ... 2019 Symposium on VLSI Technology, T66-T67, 2019 | 63 | 2019 |
| Challenges of tailoring surface chemistry and plasma/surface interactions to advance atomic layer etching SU Engelmann, RL Bruce, M Nakamura, D Metzler, SG Walton, ... ECS Journal of Solid State Science and Technology 4 (6), N5054, 2015 | 61 | 2015 |
| Post porosity plasma protection: Scaling of efficiency with porosity T Frot, W Volksen, S Purushothaman, RL Bruce, T Magbitang, DC Miller, ... Advanced Functional Materials 22 (14), 3043-3050, 2012 | 60 | 2012 |
| Photoresist modifications by plasma vacuum ultraviolet radiation: The role of polymer structure and plasma chemistry F Weilnboeck, RL Bruce, S Engelmann, GS Oehrlein, D Nest, TY Chung, ... Journal of Vacuum Science & Technology B 28 (5), 993-1004, 2010 | 59 | 2010 |
| Achieving ultrahigh etching selectivity of SiO2 over Si3N4 and Si in atomic layer etching by exploiting chemistry of complex hydrofluorocarbon precursors KY Lin, C Li, S Engelmann, RL Bruce, EA Joseph, D Metzler, GS Oehrlein Journal of Vacuum Science & Technology A 36 (4), 2018 | 56 | 2018 |
| An ultra high endurance and thermally stable selector based on TeAsGeSiSe chalcogenides compatible with BEOL IC Integration for cross-point PCM HY Cheng, WC Chien, IT Kuo, EK Lai, Y Zhu, JL Jordan-Sweet, A Ray, ... 2017 IEEE International Electron Devices Meeting (IEDM), 2.2. 1-2.2. 4, 2017 | 56 | 2017 |
| Characterizing fluorocarbon assisted atomic layer etching of Si using cyclic Ar/C4F8 and Ar/CHF3 plasma D Metzler, C Li, S Engelmann, RL Bruce, EA Joseph, GS Oehrlein The Journal of chemical physics 146 (5), 2017 | 55 | 2017 |
GS OehrleinUniversity of MarylandVerified email at umd.edu
