Anthony Peaker
Anthony Peaker
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Laplace-transform deep-level spectroscopy: The technique and its applications to the study of point defects in semiconductors
L Dobaczewski, AR Peaker, K Bonde Nielsen
Journal of applied physics 96 (9), 4689-4728, 2004
Silicon Heterostructure Handbook: Materials, Fabrication, Devices, Circuits and Applications of SiGe and Si Strained-Layer Epitaxy
JD Cressler, S Monfray, G Freeman, D Friedman, DJ Paul, S Tsujino, ...
CRC press, 2018
Laplace transform deep‐level transient spectroscopic studies of defects in semiconductors
L Dobaczewski, P Kaczor, ID Hawkins, AR Peaker
Journal of applied physics 76 (1), 194-198, 1994
Unidirectional electron flow in a nanometer-scale semiconductor channel: A self-switching device
AM Song, M Missous, P Omling, AR Peaker, L Samuelson, W Seifert
Applied Physics Letters 83 (9), 1881-1883, 2003
Vacancy–group-V-impurity atom pairs in Ge crystals doped with P, As, Sb, and Bi
VP Markevich, ID Hawkins, AR Peaker, KV Emtsev, VV Emtsev, ...
Physical Review B 70 (23), 235213, 2004
Tutorial: Junction spectroscopy techniques and deep-level defects in semiconductors
AR Peaker, VP Markevich, J Coutinho
Journal of Applied Physics 123 (16), 2018
Thermal activation and deactivation of grown‐in defects limiting the lifetime of float‐zone silicon
NE Grant, VP Markevich, J Mullins, AR Peaker, F Rougieux, D Macdonald
physica status solidi (RRL)–Rapid Research Letters 10 (6), 443-447, 2016
Detection of minority-carrier traps using transient spectroscopy
R Brunwin, B Hamilton, P Jordan, AR Peaker
Electronics letters 12 (15), 349-350, 1979
Deep‐state‐controlled minority‐carrier lifetime in n‐type gallium phosphide
B Hamilton, AR Peaker, DR Wight
Journal of Applied Physics 50 (10), 6373-6385, 1979
Recombination processes in erbium-doped MBE silicon
H Efeoglu, JH Evans, TE Jackman, B Hamilton, DC Houghton, JM Langer, ...
Semiconductor science and technology 8 (2), 236, 1993
Defect reactions associated with divacancy elimination in silicon
VP Markevich, AR Peaker, SB Lastovskii, LI Murin, JL Lindström
Journal of Physics: Condensed Matter 15 (39), S2779, 2003
Electronic properties of antimony-vacancy complex in Ge crystals
VP Markevich, AR Peaker, VV Litvinov, VV Emtsev, LI Murin
Journal of Applied Physics 95 (8), 4078-4083, 2004
Growth and structural characterization of molecular beam epitaxial erbium-doped GaAs
I Poole, KE Singer, AR Peaker, AC Wright
Journal of crystal growth 121 (1-2), 121-131, 1992
Permanent annihilation of thermally activated defects which limit the lifetime of float‐zone silicon
NE Grant, VP Markevich, J Mullins, AR Peaker, F Rougieux, D Macdonald, ...
physica status solidi (a) 213 (11), 2844-2849, 2016
Trivacancy and trivacancy-oxygen complexes in silicon: Experiments and ab initio modeling
VP Markevich, AR Peaker, SB Lastovskii, LI Murin, J Coutinho, VJB Torres, ...
Physical Review B 80 (23), 235207, 2009
Capture cross sections of the gold donor and acceptor states in n-type Czochralski silicon
RH Wu, AR Peaker
Solid-State Electronics 25 (7), 643-649, 1982
Evidence for substitutional-interstitial defect motion leading to DX behavior by donors in As
L Dobaczewski, P Kaczor, M Missous, AR Peaker, Z Żytkiewicz
Physical review letters 68 (16), 2508, 1992
Electronic properties of vacancy–oxygen complex in Ge crystals
VP Markevich, ID Hawkins, AR Peaker, VV Litvinov, LI Murin, ...
Applied Physics Letters 81 (10), 1821-1823, 2002
Coexistence of deep levels with optically active InAs quantum dots
SW Lin, C Balocco, M Missous, AR Peaker, AM Song
Physical Review B 72 (16), 165302, 2005
Stress-induced positive charge in Hf-based gate dielectrics: Impact on device performance and a framework for the defect
CZ Zhao, JF Zhang, MH Chang, AR Peaker, S Hall, G Groeseneken, ...
IEEE Transactions on Electron Devices 55 (7), 1647-1656, 2008
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