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Morteza Gholipour
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Highly accurate SPICE-compatible modeling for single-and double-gate GNRFETs with studies on technology scaling
M Gholipour, YY Chen, A Sangai, D Chen
2014 Design, Automation & Test in Europe Conference & Exhibition (DATE), 1-6, 2014
402014
A SPICE-compatible model of MOS-type graphene nano-ribbon field-effect transistors enabling gate-and circuit-level delay and power analysis under process variation
YY Chen, A Sangai, A Rogachev, M Gholipour, G Iannaccone, G Fiori, ...
IEEE Transactions on Nanotechnology 14 (6), 1068-1082, 2015
392015
Analytical SPICE-compatible model of Schottky-barrier-type GNRFETs with performance analysis
M Gholipour, YY Chen, A Sangai, N Masoumi, D Chen
IEEE Transactions on Very Large Scale Integration (VLSI) Systems 24 (2), 650-663, 2015
282015
Graphene nano-ribbon field-effect transistors as future low-power devices
YY Chen, A Sangai, M Gholipour, D Chen
International Symposium on Low Power Electronics and Design (ISLPED), 151-156, 2013
272013
Schottky-barrier-type graphene nano-ribbon field-effect transistors: A study on compact modeling, process variation, and circuit performance
YY Chen, A Sangai, M Gholipour, D Chen
2013 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH …, 2013
262013
Design investigation of nanoelectronic circuits using crossbar-based nanoarchitectures
M Gholipour, N Masoumi
Microelectronics Journal 44 (3), 190-200, 2013
222013
Asymmetric gate Schottky-barrier graphene nanoribbon FETs for low-power design
M Gholipour, N Masoumi, YYC Chen, D Chen, M Pourfath
IEEE Transactions on Electron Devices 61 (12), 4000-4006, 2014
172014
Efficient inclusive analytical model for delay estimation of multi-walled carbon nanotube interconnects
M Gholipour, N Masoumi
IET circuits, devices & systems 6 (4), 252-259, 2012
152012
Design and implementation of lifting based integer wavelet transform for image compression applications
M Gholipour
International Conference on Digital Information and Communication Technology …, 2011
142011
A variation-aware design for storage cells using Schottky-barrier-type GNRFETs
E Abbasian, M Gholipour
Journal of Computational Electronics 19 (3), 987-1001, 2020
132020
Graphene nanoribbon crossbar architecture for low power and dense circuit implementations
M Gholipour, N Masoumi
Microelectronics Journal 45 (11), 1533-1541, 2014
132014
Single‐ended half‐select disturb‐free 11T static random access memory cell for reliable and low power applications
E Abbasian, M Gholipour
International Journal of Circuit Theory and Applications 49 (4), 970-989, 2021
122021
Effects of the channel length on the nanoscale field effect diode performance
B Azizollah-Ganji, M Gholipour
Journal of Optoelectronical Nanostructures 3 (2), 29-40, 2018
102018
A compact short-channel model for symmetric double-gate TMDFET in subthreshold region
M Gholipour
IEEE Transactions on Electron Devices 64 (8), 3466-3469, 2017
102017
Flexible transition metal dichalcogenide field-effect transistors: a circuit-level simulation study of delay and power under bending, process variation, and scaling
YY Chen, M Gholipour, D Chen
2016 21st Asia and South Pacific Design Automation Conference (ASP-DAC), 761-768, 2016
92016
Compact modeling to device-and circuit-level evaluation of flexible TMD field-effect transistors
M Gholipour, YY Chen, D Chen
IEEE Transactions on Computer-Aided Design of Integrated Circuits and …, 2017
82017
Hardware implementation of lifting based wavelet transform
M Gholipour, HA Noubari
2010 2nd International Conference on Signal Processing Systems 1, V1-215-V1-219, 2010
82010
Performance evaluation of GNRFET and TMDFET devices in static random access memory cells design
E Abbasian, M Gholipour, F Izadinasab
International Journal of Circuit Theory and Applications 49 (11), 3630-3652, 2021
72021
Design of a Schmitt-Trigger-Based 7T SRAM cell for variation resilient Low-Energy consumption and reliable internet of things applications
E Abbasian, M Gholipour
AEU-International Journal of Electronics and Communications 138, 153899, 2021
72021
Half-select disturb-free single-ended 9-transistor SRAM cell with bit-interleaving scheme in TMDFET technology
F Izadinasab, M Gholipour
Microelectronics Journal 113, 105100, 2021
72021
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