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Jejune Park
Jejune Park
Semiconductor R&D Center, Samsung Electronics
Verified email at samsung.com
Title
Cited by
Cited by
Year
Formation of silicene nanosheets on graphite
M De Crescenzi, I Berbezier, M Scarselli, P Castrucci, M Abbarchi, ...
ACS nano 10 (12), 11163-11171, 2016
1062016
Electron transport properties of mirror twin grain boundaries in molybdenum disulfide: Impact of disorder
J Park, KH Xue, M Mouis, F Triozon, A Cresti
Physical Review B 100 (23), 235403, 2019
142019
Two-dimensional dirac fermions on oxidized black phosphorus
SH Kang, J Park, S Woo, YK Kwon
Physical Chemistry Chemical Physics 21 (43), 24206-24211, 2019
72019
Impact of edge roughness on the electron transport properties of MoS2 ribbons
J Park, M Mouis, F Triozon, A Cresti
Journal of Applied Physics 124 (22), 2018
72018
Simulation of 2D material-based tunnel field-effect transistors: planar vs. vertical architectures
AC Jiang Cao, Jejune Park, François Triozon, Marco G. Pala
Nanoelectronic Devices 1 (Tunnel FETs), 2018
6*2018
ACS Nano 10, 11163 (2016)
M De Crescenzi, I Berbezier, M Scarselli, P Castrucci, M Abbarchi, ...
Crossref, 0
5
First demonstration of 3-dimensional stacked FET with top/bottom source-drain isolation and stacked n/p metal gate
J Park, W Kim, S Park, J Yun, K Hwang, J Yang, D Kim, JW Jeong, C Yun, ...
2023 International Electron Devices Meeting (IEDM), 1-4, 2023
32023
In-plane anisotropy of graphene by strong interlayer interactions with van der Waals epitaxially grown MoO3
H Kim, JH Kim, J Kim, J Park, K Park, JH Baek, JC Shin, H Lee, J Son, ...
Science Advances 9 (23), eadg6696, 2023
32023
Self-isolating electrode deposition process using the area-selective MoO2 and MoO3 atomic layer deposition technique
YW Kim, J Park, JH Park, E Han, Y Jung, YW Jang, MY Lee, W Jeon
Applied Materials Today 37, 102160, 2024
2024
Simulation quantique du transport électronique dans les dichalcogénures de métaux de transition bidimensionnels désordonnés
J Park
Université Grenoble Alpes, 2020
2020
Quantum simulation of electron transport in disordered two-dimensional transition metal dichalcogenides
J Park
Université Grenoble Alpes, 2020
2020
Grain boundaries in transition metal dichalcogenides: Electron transport properties
J Park, M Mouis, F Triozon, X Kan-Hao, A Cresti
GDR-I Graphene & Co Annual Meeting 2019, 2019
2019
Electron transport along and through MoS2 grain boundaries
J Park, M Mouis, F Triozon, X Kan-Hao, A Cresti
Graphene 2019, 2019
2019
Simulation of electron transport in rough MoS2 ribbons
J Park, M Mouis, F Triozon, A Cresti
GDR-I Graphene & Co Annual Meeting 2018, 2018
2018
First-Principle Study on Structural and Electronic Properties of zigzag Carbon Nanotubes
J Park
Proceeding of EDISON Challenge, 446-449, 2014
2014
Electron transport in disordered mirror twin grain boundaries of molybdenum disulfide
J Park
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