Observation of Dirac plasmons in a topological insulator P Di Pietro, M Ortolani, O Limaj, A Di Gaspare, V Giliberti, F Giorgianni, ... Nature nanotechnology 8 (8), 556-560, 2013 | 421 | 2013 |
Thickness-Independent Transport Channels in Topological Insulator Thin Films N Bansal, YS Kim, M Brahlek, E Edrey, S Oh Physical review letters 109 (11), 116804, 2012 | 413 | 2012 |
Thickness-dependent bulk properties and weak antilocalization effect in topological insulator BiSe YS Kim, M Brahlek, N Bansal, E Edrey, GA Kapilevich, K Iida, M Tanimura, ... Physical Review B 84 (7), 073109, 2011 | 363 | 2011 |
THz response and colossal Kerr rotation from the surface states of the topological insulator BiSe RV Aguilar, AV Stier, W Liu, LS Bilbro, DK George, N Bansal, L Wu, ... arXiv preprint arXiv:1105.0237, 2011 | 278 | 2011 |
A sudden collapse in the transport lifetime across the topological phase transition in (Bi1−xInx)2Se3 L Wu, M Brahlek, R Valdés Aguilar, AV Stier, CM Morris, Y Lubashevsky, ... Nature Physics 9 (7), 410-414, 2013 | 270 | 2013 |
Topological-Metal to Band-Insulator Transition in Thin Films M Brahlek, N Bansal, N Koirala, SY Xu, M Neupane, C Liu, MZ Hasan, ... Physical review letters 109 (18), 186403, 2012 | 247 | 2012 |
Epitaxial growth of topological insulator Bi2Se3 film on Si (111) with atomically sharp interface N Bansal, YS Kim, E Edrey, M Brahlek, Y Horibe, K Iida, M Tanimura, ... Thin Solid Films 520 (1), 224-229, 2011 | 222 | 2011 |
Mapping the orbital wavefunction of the surface states in three-dimensional topological insulators Y Cao, JA Waugh, XW Zhang, JW Luo, Q Wang, TJ Reber, SK Mo, Z Xu, ... Nature Physics 9 (8), 499-504, 2013 | 167 | 2013 |
Transport properties of topological insulators: Band bending, bulk metal-to-insulator transition, and weak anti-localization M Brahlek, N Koirala, N Bansal, S Oh Solid State Communications 215, 54-62, 2015 | 162 | 2015 |
Emergence of Decoupled Surface Transport Channels in Bulk Insulating Thin Films M Brahlek, N Koirala, M Salehi, N Bansal, S Oh Physical review letters 113 (2), 026801, 2014 | 138 | 2014 |
Surface versus bulk state in topological insulator Bi2Se3 under environmental disorder M Brahlek, YS Kim, N Bansal, E Edrey, S Oh Applied Physics Letters 99 (1), 2011 | 98 | 2011 |
Time-resolved terahertz dynamics in thin films of the topological insulator Bi2Se3 R Valdes Aguilar, J Qi, M Brahlek, N Bansal, A Azad, J Bowlan, S Oh, ... Applied Physics Letters 106 (1), 2015 | 77 | 2015 |
Aging and reduced bulk conductance in thin films of the topological insulator Bi2Se3 R Valdés Aguilar, L Wu, AV Stier, LS Bilbro, M Brahlek, N Bansal, S Oh, ... Journal of Applied Physics 113 (15), 2013 | 43 | 2013 |
Transferring MBE-grown topological insulator films to arbitrary substrates and metal–insulator transition via Dirac gap N Bansal, MR Cho, M Brahlek, N Koirala, Y Horibe, J Chen, W Wu, ... Nano letters 14 (3), 1343-1348, 2014 | 40 | 2014 |
Robust topological surface states of Bi2Se3 thin films on amorphous SiO2/Si substrate and a large ambipolar gating effect N Bansal, N Koirala, M Brahlek, MG Han, Y Zhu, Y Cao, J Waugh, ... Applied Physics Letters 104 (24), 2014 | 38 | 2014 |
In situ study of emerging metallicity on ion-bombarded SrTiO3 surface H Gross, N Bansal, YS Kim, S Oh Journal of Applied Physics 110 (7), 2011 | 37 | 2011 |
Dirac cone shift of a passivated topological BiSe interface state GS Jenkins, DC Schmadel, AB Sushkov, HD Drew, M Bichler, ... Physical Review B 87 (15), 155126, 2013 | 34 | 2013 |
Sr flux stability against oxidation in oxide-molecular-beam-epitaxy environment: Flux, geometry, and pressure dependence YS Kim, N Bansal, C Chaparro, H Gross, S Oh Journal of Vacuum Science & Technology A 28 (2), 271-276, 2010 | 34 | 2010 |
Giant plateau in the terahertz Faraday angle in gated BiSe GS Jenkins, AB Sushkov, DC Schmadel, MH Kim, M Brahlek, N Bansal, ... Physical Review B 86 (23), 235133, 2012 | 21 | 2012 |
Crucible aperture: An effective way to reduce source oxidation in oxide molecular beam epitaxy process YS Kim, N Bansal, S Oh Journal of Vacuum Science & Technology A 28 (4), 600-602, 2010 | 21 | 2010 |