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Francesco Conzatti
Francesco Conzatti
Lead Principal Analog Design Engineer
Verified email at infineon.com
Title
Cited by
Cited by
Year
Strain-induced performance improvements in InAs nanowire tunnel FETs
F Conzatti, MG Pala, D Esseni, E Bano, L Selmi
IEEE transactions on electron devices 59 (8), 2085-2092, 2012
1152012
Impact of interface traps on the IV curves of InAs tunnel-FETs and MOSFETs: A full quantum study
MG Pala, D Esseni, F Conzatti
2012 international Electron devices meeting, 6.6. 1-6.6. 4, 2012
792012
Surface-roughness-induced variability in nanowire InAs tunnel FETs
F Conzatti, MG Pala, D Esseni
IEEE electron device letters 33 (6), 806-808, 2012
562012
A simulation study of strain induced performance enhancements in InAs nanowire Tunnel-FETs
F Conzatti, MG Pala, D Esseni, E Bano, L Selmi
2011 international electron devices meeting, 5.2. 1-5.2. 4, 2011
362011
Investigation of strain engineering in FinFETs comprising experimental analysis and numerical simulations
F Conzatti, N Serra, D Esseni, M De Michielis, A Paussa, P Palestri, ...
IEEE transactions on electron devices 58 (6), 1583-1593, 2011
362011
Experimental and physics-based modeling assessment of strain induced mobility enhancement in FinFETs
N Serra, F Conzatti, D Esseni, M De Michielis, P Palestri, L Selmi, ...
2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009
322009
A 130dB SPL 72dB SNR MEMS microphone using a sealed-dual membrane transducer and a power-scaling read-out ASIC
L Sant, M Füldner, E Bach, F Conzatti, A Caspani, R Gaggl, A Baschirotto, ...
IEEE Sensors Journal 22 (8), 7825-7833, 2022
212022
Semi-classical transport modelling of CMOS transistors with arbitrary crystal orientations and strain engineering: (Review invited paper)
D Esseni, F Conzatti, M De Michielis, N Serra, P Palestri, L Selmi
Journal of computational electronics 8, 209-224, 2009
172009
Pseudospectral methods for the efficient simulation of quantization effects in nanoscale MOS transistors
A Paussa, F Conzatti, D Breda, R Vermiglio, D Esseni, P Palestri
IEEE transactions on electron devices 57 (12), 3239-3249, 2010
152010
Simulation study of the on-current improvements in Ge and sGe versus Si and sSi nano-MOSFETs
F Conzatti, P Toniutti, D Esseni, P Palestri, L Selmi
2010 International Electron Devices Meeting, 15.2. 1-15.2. 4, 2010
142010
Investigation of localized versus uniform strain as a performance booster in InAs Tunnel-FETs
F Conzatti, MG Pala, D Esseni, E Bano
Solid-state electronics 88, 49-53, 2013
132013
Drain current improvements in uniaxially strained p-MOSFETs: A multi-subband Monte Carlo study
F Conzatti, M De Michielis, D Esseni, P Palestri
Solid-state electronics 53 (7), 706-711, 2009
132009
Sigma-delta analog-to-digital converter including loop filter having components for feedback digital-to-analog converter correction
M Bresciani, JG Kauffman, U Schuetz, P Torta, F Conzatti
US Patent 9,866,227, 2018
102018
A CT ΔΣ ADC with 9/50MHz BW achieving 73/71dB DR designed for robust blocker tolerance in 14nm FinFET
F Conzatti, L Dorrer, P Torta, C Kropf, D Patzold, JSP Garcia, V Rallos, ...
ESSCIRC 2017-43rd IEEE European Solid State Circuits Conference, 139-142, 2017
82017
On the role of Coulomb scattering in hafnium-silicate gated silicon n and p-channel metal-oxide-semiconductor-field-effect-transistors
SM Thomas, MJ Prest, TE Whall, DR Leadley, P Toniutti, F Conzatti, ...
Journal of Applied Physics 110 (12), 2011
62011
System and method for a successive approximation analog-to-digital converter
A Paussa, F Conzatti
US Patent 10,790,842, 2020
52020
Analog Circuits in 28 nm and 14 nm FinFET
L Dörrer, F Kuttner, F Conzatti, P Torta
Hybrid ADCs, Smart Sensors for the IoT, and Sub-1V & Advanced Node Analog …, 2018
52018
On the surface-roughness scattering in biaxially strained n-and p-MOS transistors
M De Michielis, F Conzatti, D Esseni, L Selmi
IEEE transactions on electron devices 58 (9), 3219-3223, 2011
52011
Pseudo-spectral method for the modelling of quantization effects in nanoscale MOS transistors
A Paussa, F Conzatti, D Breda, R Vermiglio, D Esseni
2010 International Conference on Simulation of Semiconductor Processes and …, 2010
52010
A Multi-Subband Monte Carlo study of electron transport in strained SiGe n-type FinFETs
D Lizzit, P Palestri, D Esseni, F Conzatti, L Selmi
2012 Proceedings of the European Solid-State Device Research Conference …, 2012
22012
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