| Ionization coefficients and excess noise characteristics of AlInAsSb on an InP substrate TJ Ronningen, SH Kodati, X Jin, S Lee, H Jung, X Tao, HIJ Lewis, ... Applied Physics Letters 123 (13), 2023 | 2 | 2023 |
| Auger-limited minority carrier lifetime in GeSn/SiGeSn quantum well PC Grant, PT Webster, RA Carrasco, JV Logan, CP Hains, N Gajowski, ... Applied Physics Letters 124 (11), 2024 | | 2024 |
| Defect Spectroscopy of MBE-grown GaAs0.51Sb0.49 pin Infrared Detectors on InP Substrates RL Adams, H Jung, N Gajowski, S Lee, S Krishna, SA Ringel 2023 IEEE Photonics Conference (IPC), 1-2, 2023 | | 2023 |
| Fabrication of Si/GaAs0.51Sb0.49 Heterostructure Diodes via Transfer Printing Y Xia, SSS Nikor, NS Nallamothu, RL Adams, H Jung, N Gajowski, S Lee, ... 2023 IEEE Photonics Conference (IPC), 1-2, 2023 | | 2023 |
| Direct Bonding of GaAsSb to Silicon for High-Speed Avalanche Photodiodes NS Nallamothu, Y Xia, SSS Nikor, H Jung, N Gajowski, S Lee, S Arafin, ... Laser Science, JM7A. 105, 2023 | | 2023 |
| Investigation of Zn-diffusion in 2-micron InGaAs/GaAsSb superlattice planar diodes using atomic layer deposition of ZnO M Muduli, M Schwartz, N Gajowski, S Lee, S Krishna Infrared Technology and Applications XLIX 12534, 45-50, 2023 | | 2023 |
Seunghyun Jacob LeeThe Ohio State UniversityVerified email at osu.edu
